CMP ABRASIVE, POLISHING METHOD, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a CMP (chemical mechanical polishing) abrasive excellent in dispersibility of cerium oxide particles; a polishing method capable of giving global flatness by polishing an uneven substrate; and a method for producing a semiconductor device having a polished surface with a high machining accuracy.

SOLUTION: The CMP abrasive contains water, cerium oxide particles, and polyvinylamine as a dispersant therefor. Preferably, the content of polyvinylamine is 0.01-5 pts. wt. based on 100 pts.wt. cerium oxide particles.

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