发明名称 METHOD AND SYSTEM FOR USING ION IMPLANTATION FOR TREATING A LOW-K DIELECTRIC FILM
摘要 A system and method for forming a mechanically strengthened low-k dielectric film (20) on a substrate (10) includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film (20) on the substrate (10). An upper surface of the low-k dielectric film (20) is then treated in order to increase the film's mechanical strength, or reduce its dielectric constant.
申请公布号 WO2004109756(A3) 申请公布日期 2005.08.04
申请号 WO2004US15577 申请日期 2004.06.02
申请人 DUERKSEN, KENNETH;VIDUSEK, DAVID, A. 发明人 DUERKSEN, KENNETH;VIDUSEK, DAVID, A.
分类号 H01G4/236;H01L;H01L21/31;H01L21/3105;H01L21/312;H01L21/336;H01L21/469;H01L23/14 主分类号 H01G4/236
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