SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION OF THE SAME

摘要

A semiconductor device and a method for manufacturing the same are provided to improve program erase operation and retention time by using a charge trap layer composed of a silicon nitride layer, a silicon layer and a silicon nitride layer. A tunnel oxide layer(202) is formed on a semiconductor substrate(201). A silicon nitride layer(203), a silicon layer(204) and a silicon nitride layer(205) are sequentially formed on the tunnel oxide layer to form a charge trap layer(206). A dielectric film(207) is formed on the charge trap layer. A gate electrode(208) is formed on the dielectric film.