| 摘要 |
<P>PROBLEM TO BE SOLVED: To cope with the problem that many of alkali developable resists using UV lithography are developed for semiconductor manufacturing and have a relatively small aspect ratio and an alkali developable epoxy-based resist capable of forming a pattern having a high aspect ratio is liable to deterioration of storage stability, therefore development of a resist composition excellent in storage stability is expected. <P>SOLUTION: A resist composition comprising an alkali-soluble epoxy compound (A), a photoacid generator (B) and a phenolic resin (C) is provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
