| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a crystal by which the generation of vacancy clusters can be suppressed without lowering pulling speed. SOLUTION: A single crystal 13 is grown by a CZ method. When a raw material melt 12 is formed, carbon powder 10 is charged onto the surface of the inner bottom of a crucible 3 so that the carbon concentration in the crystal becomes≥1×10<SP>16</SP>atoms/cm<SP>3</SP>, and thereafter, a polycrystalline raw material 11 is charged, and the single crystal 13 is pulled by using the raw material melt 12. COPYRIGHT: (C)2008,JPO&INPIT
|
