发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
摘要 |
Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.
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申请公布号 |
US2009152673(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20080130877 |
申请日期 |
2008.05.30 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KWON O-KYUN;SUH DONG-WOO;PYO JUNGHYUNG;KIM GYUNG-OCK |
分类号 |
H01L23/482;H01L21/76 |
主分类号 |
H01L23/482 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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