Memory devices and memory operational methods including single erase operation of conductive bridge memory cells

摘要

Memory devices and memory operational methods are described. One example memory system includes a common conductor and a plurality of memory cells coupled with the common conductor. The memory system additionally includes access circuitry configured to provide different ones of the memory cells into one of a plurality of different memory states at a plurality of different moments in time between first and second moments in time. The access circuitry is further configured to maintain the common conductor at a voltage potential, which corresponds to the one memory state, between the first and second moments in time to provide the memory cells into the one memory state.

主权项

1. A memory device comprising:
a plurality of conductive bridge memory cells arranged in an array, the array comprising X banks each comprising Y tiles each comprising Z sub-tiles, wherein each of the Z sub-tiles comprises N of the conductive bridge memory cells and N>1; Z common conductors each associated with one of the Z sub-tiles and the N conductive bridge memory cells of the one of the Z sub-tiles; circuitry located at least partially with the array to write and read a memory state of the conductive bridge memory cells located in a page of the memory cells which are located across a plurality of the Z sub-tiles, wherein the page of the memory cells comprises less than the N conductive bridge memory cells; and wherein the circuitry is configured to erase the N conductive bridge memory cells which are associated with one of the Z common conductors in a single erase operation.