Reference voltage modification in a memory device

摘要

A method and apparatus for modifying a reference voltage between refreshes in a memory device are disclosed. The memory array may include a plurality of memory cells. The memory device may also include a sense amplifier. The sense amplifier may be configured to read data from the plurality of memory cells using a reference voltage. The memory device may also include a sense amplifier reference voltage modification circuit. The sense amplifier reference voltage modification circuit may be configured to detect a triggering event and modify the reference voltage in response to detecting a triggering event.

主权项

1. A memory device comprising:
a memory array including a plurality of memory cells; a sense amplifier configured to read data from the plurality of memory cells using a reference voltage; and a sense amplifier reference voltage modification circuit, the sense amplifier reference voltage modification circuit configured to detect a triggering event and modify the reference voltage in response to detecting a triggering event, wherein the sense amplifier reference voltage modification circuit comprises:
a refresh counter to store a current refresh address;a current row address counter to store a row address corresponding to a current row requested to be accessed;a subtractor configured to determine a time elapsed since a last refresh based on the current refresh address and the current row address;a voltage modifier configured and arranged to modify the reference voltage according to one or more voltage step values;a comparator configured to determine whether the time elapsed since the last refresh is outside a time threshold; anda reference voltage generator to generate the reference voltage in response to the voltage modifier.