发明名称 Vertical hall effect device
摘要 A vertical Hall effect device includes at least four Hall effect regions which are partly decoupled from each other, and each of the at least four Hall effect regions has first and second opposite faces. Each of the Hall effect regions has on the first face a first contact and a second contact that are placed symmetrically with respect to a plane of symmetry at the respective Hall effect region, wherein the plane of symmetry is orientated perpendicular to a straight line between the first contact and the second contact of the respective Hall effect region. Each of the Hall effect regions has at least one contact area placed in an area around the respective plane of symmetry, wherein low ohmic connection means include at least one low ohmic connecting path connecting the contact areas of the Hall effect regions.
申请公布号 US9425385(B2) 申请公布日期 2016.08.23
申请号 US201414273807 申请日期 2014.05.09
申请人 Infineon Technologies AG 发明人 Ausserlechner Udo
分类号 G01R33/07;H01L43/06;G01R33/00;H01L43/04;H01L27/22 主分类号 G01R33/07
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. A vertical Hall effect device comprising: at least four Hall effect regions comprising a first Hall effect region, a second Hall effect region, a third Hall effect region and a fourth Hall effect region, which are at least partly decoupled from each other; wherein each of the at least four Hall effect regions has a first face and a second face opposite of the first face; wherein each of the at least four Hall effect regions has on the first face a first contact as well as a second contact, wherein the first contact and the second contact are placed symmetrically with respect to a plane of symmetry at the respective Hall effect region, wherein the plane of symmetry is orientated perpendicular to a straight line between the first contact and the second contact of the respective Hall effect region; wherein each of the at least four Hall effect regions has at least one contact area, which is placed at least in an area around the respective plane of symmetry, wherein low ohmic connection means comprise at least one low ohmic connecting path connecting the contact areas of the at least four Hall effect regions.
地址 Neubiberg DE