发明名称 成膜方法及び成膜装置
摘要 A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.
申请公布号 JP6020239(B2) 申请公布日期 2016.11.02
申请号 JP20130027972 申请日期 2013.02.15
申请人 東京エレクトロン株式会社 发明人 杉田 吉平;橋本 浩幸;原田 宗生
分类号 H01L21/312;H01L21/3205;H01L21/768;H01L23/522;H01L23/532 主分类号 H01L21/312
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