Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making

摘要

Generally, and in one form of the invention, a monolithic solid state image-sensing device is disclosed. The device utilizes only a single layer of polysilicon deposition in its fabrication process that is split into two or more phases by very narrow gaps. The single polysilicon layer makes the fabrication process simpler and more compatible with modem semiconductor manufacturing technology. The device also incorporates a lateral anti-blooming drain structure that is formed by a self-aligned diffusion process and does not need a polysilicon gate for its proper function.