发明名称 Methods for gate-length biasing using annotation data
摘要 Methods for generating a biased layout for making an integrated circuit are disclosed. One such method includes obtaining a nominal layout defined by one or more cells, where each cell has one or more transistor gate features with a nominal gate length. Then, obtaining an annotated layout. The annotated layout contains information describing gate-length biasing of one or more of the transistor gate features in one or more cells of the nominal layout. A biased layout is produced by modifying the nominal layout using the information from the annotated layout. The biasing modifies a gate length of those transistor gate features identified by the information of the annotated layout.
申请公布号 US8185865(B2) 申请公布日期 2012.05.22
申请号 US20100717885 申请日期 2010.03.04
申请人 GUPTA PUNEET;KAHNG ANDREW B.;TELA INNOVATIONS, INC. 发明人 GUPTA PUNEET;KAHNG ANDREW B.
分类号 G06F17/50;G06F15/04 主分类号 G06F17/50
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