PROCESS FOR PREPARING ZIRCONIUM OXIDE THIN FILMS

摘要

A method for manufacturing a ZrO thin film is provided to prevent carbon contamination and to restrain the generation of a silicon oxide layer by using Zr alone without an additional supply of oxygen source. A ZrO thin film is formed by performing an MOCVD(Metal Organic Chemical Vapor Deposition) using Zr compound as a precursor material. The predetermined Zr compound is represented by a predetermined chemical formula. The predetermined Zr compound is used for forming the ZrO thin film without an additional oxygen source. The predetermined Zr compound is kept in a predetermined temperature range of room temperature to 90 ‹C.