DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A method of fabricating a display device including forming one or more thin-film transistors (“TFTs”) each configured to include an active layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode on a substrate. A storage capacitor including a first storage electrode and a second storage electrode overlapping the first storage electrode with the gate insulating layer interposed there between is also formed on the substrate. A top surface of the first storage electrode may include hillocks and the gate insulating layer is formed between the first storage electrode and the second storage electrode to conform to the shape of the top surface of the first storage electrode with the hillocks.

主权项

1. A method of fabricating a display device, comprising:
forming a first storage electrode; forming hillocks on the first storage electrode by performing a heat treatment process; forming an insulating layer on the first storage electrode; and forming a second storage electrode overlapping the first storage electrode, wherein the insulating layer is formed between the first storage electrode and the second storage electrode, and wherein the heat treatment process is performed at a temperature that is higher than temperatures at which the insulation layer and the second storage electrode are formed.