SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce the leakage current between a source and a drain of a transistor including an oxide semiconductor.

SOLUTION: A compound conductor including indium and nitrogen and having a band gap of less than 2.8 eV is used for a first gate film 114 in contact with a gate insulation film 112. Since this compound conductor has a work function of 5 eV or more, preferably 5.5 eV or more, the electron concentration of an oxide semiconductor film 106 can be kept so low that the leakage current between a source and a drain can be reduced.

COPYRIGHT: (C)2012,JPO&INPIT