发明名称 |
DEVICE ARCHITECTURE AND METHOD FOR IMPROVED PACKING OF VERTICAL FIELD EFFECT DEVICES |
摘要 |
A semiconductor field-effect device is disclosed that utilizes an octagonal or inverse-octagonal deep trench super-junction in combination with an octagonal or inverse-octagonal gate trench. The field-effect device achieves improved packing density, improved current density, and improved on resistance, while at the same time maintaining compatibility with the multiple-of-45°-angles of native photomask processing and having well characterized (010), (100) and (110) (and their equivalent) silicon sidewall surfaces for selective epitaxial refill and gate oxidation, resulting in improved scalability. By varying the relative length of each sidewall surface, devices with differing threshold voltages can be achieved without additional processing steps. Mixing trenches with varying sidewall lengths also allows for stress balancing during selective epitaxial refill. |
申请公布号 |
EP2923381(A4) |
申请公布日期 |
2016.08.17 |
申请号 |
EP20130857471 |
申请日期 |
2013.11.26 |
申请人 |
D3 SEMICONDUCTOR LLC |
发明人 |
HARRINGTON, THOMAS, E.;YANG, ROBERT, KUO-CHANG |
分类号 |
H01L29/04;H01L21/336;H01L29/78 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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