| 发明名称 |
ELECTRICAL CONTACTS TO NANOSTRUCTURED AREAS |
| 摘要 |
A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed. |
| 申请公布号 |
US2016268452(A9) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201414468219 |
申请日期 |
2014.08.25 |
| 申请人 |
Advanced Silicon Group, Inc. |
发明人 |
Black Marcie R.;Forziati Joanne;Jura Michael;Miller Jeff;Murphy Brian;Standley Adam |
| 分类号 |
H01L31/0236;H01L31/0216;H01L31/0352;H01L31/18 |
主分类号 |
H01L31/0236 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An optoelectronic device comprising (a) a substrate, (b) a nanostructured area on a first surface of the substrate, (c) an electrically insulating layer atop the first surface, (d) a segment of the nanostructured area where the nanostructures are at least partially broken or removed, (e) optionally a covering layer atop the segment, and (f) a conductor atop the electrically insulating layer and optional covering layer. |
| 地址 |
Lincoln MA US |
