| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having reduced recovery time.SOLUTION: A semiconductor device comprises: a first electrode (cathode) 10; a second electrode (anode) 11; a first conductivity type first semiconductor region 20 provided between the first electrode 10 and the second electrode 11; a second conductivity type second semiconductor region 30A provided between the first semiconductor region 20 and the second electrode 11; a second conductivity type third semiconductor region 30B provided between the first semiconductor region 20 and the second electrode 11 in such a manner that a part of the first semiconductor region 20 is located between the second semiconductor region 30A and the third semiconductor region 30B in a second direction crossing a first direction from the first electrode 10 toward the second electrode 11; and a second conductivity type fourth semiconductor region 31 which is provided between the part of the first semiconductor region 20 and the second electrode 11 and has an impurity concentration different from an impurity concentration of the second semiconductor region 30A and an impurity concentration of the third semiconductor region 30B.SELECTED DRAWING: Figure 1 |
