| 摘要 |
PROBLEM TO BE SOLVED: To provide a light receiving element, having a degree of freedom of a substrate, consuming small power during a standby (during no light irradiation), and having a large S/N during light irradiation.SOLUTION: An ultraviolet transmissive material is used for an electrode of an FET, and a heterointerface of both GaN-based films such as a heterointerface of AlGaN and GaN is used for an electron transit region. |
