SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, OR DISPLAY DEVICE HAVING THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a novel semiconductor device having an oxide semiconductor film.SOLUTION: A semiconductor device has a first transistor and a second transistor. The first transistor has: a first gate electrode; a first insulating film on the first gate electrode; a first oxide semiconductor film on the first insulating film; a source electrode electrically connected with the first oxide semiconductor film; a drain electrode electrically connected with the first oxide semiconductor film; a second insulating film on the first oxide semiconductor film; a second oxide semiconductor film provided on the second insulating film and that functions as a second gate electrode; and a third insulating film on the second oxide semiconductor film. The second transistor has: a third oxide semiconductor film provided on the second insulating film and that includes a channel region, a source region, and a drain region; a fourth insulating film on the channel region; a third gate electrode on the fourth insulating film; and a third insulating film on the source region and the drain region.SELECTED DRAWING: Figure 1