发明名称 REACTION CHAMBER
摘要 PURPOSE: A reaction chamber is provided to shorten the time needed to form and anneal a dielectric layer, by using the reaction chamber in which the dielectric layer is formed, and the dielectric layer is annealed by an in-situ method using ozone or oxygen gas only. CONSTITUTION: A reaction chamber(40) has a shower head(42) on its ceiling and a semiconductor substrate mounting board established under the shower head. A semiconductor substrate is loaded on the mounting board. The reaction chamber further comprises the first and second gas supply lines(56,58) connected to the shower head. A source gas for forming a dielectric layer is supplied through the first gas supply line. The second gas supply line is commonly used in supplying at least two kinds of gas such as reaction gas and anneal gas of the dielectric layer.
申请公布号 KR20000077497(A) 申请公布日期 2000.12.26
申请号 KR20000048328 申请日期 2000.08.21
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 PARK, YEONG UK;WON, SEOK JUN;HYUNG, YONG U
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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