TRENCH ISOLATION METHOD AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A TRENCH

摘要

PURPOSE: A trench isolation method is provided to simplify a manufacturing process and reduce an aspect ratio in filling a trench as compared with a shallow trench isolation(STI) method by using a photoresist pattern as a mask for forming the trench, and to uniformly maintain chemical mechanical polishing(CMP) quantity for forming an isolation layer of a uniform thickness by using CeO2 based polishing agent having a large CMP selectivity of a silicon substrate and an oxidation layer. CONSTITUTION: A photoresist pattern is formed on a side of a bare silicon substrate(100). A predetermined depth of the substrate is etched to form a trench by using the photoresist pattern as an etching mask. The photoresist pattern is eliminated. An insulating layer is formed in the trench. A chemical mechanical polishing(CMP) process is performed regarding the resultant structure having the insulating layer by using slurry including CeO2 based polishing agent until the substrate is exposed.