| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method which improves resistance of a resist pattern when a substrate is subjected to etching process or ion implantation using a developed resist pattern as a mask by combining a second layer resist film with a first layer resist film, compared to a case only the second layer resist film is used. <P>SOLUTION: The pattern forming method comprises steps of: forming a first resist film by applying a first positive type resist material on a surface of a substrate, the first positive type resist material containing a polymeric compound that has a repeated unit containing an aromatic group selected from a group consisting of naphthalene, fluorene, fluorenone, anthracene, phenanthrene, pyrene, anthraquinone, xanthone, thioxanthone, benzocoumarin, phenalene-1-on, and acenaphthene and that dissolves in alkaline by acid; forming a second resist film by applying a second positive type resist material on the first resist film, the second positive type resist material containing alkyl alcohol as a solvent; and forming a resist pattern, after exposing with a high-energy beam and baking, by developing the first and second resist films simultaneously using a developing solution. <P>COPYRIGHT: (C)2012,JPO&INPIT |
