| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive photosensitive composition allowing improvement of pattern collapse in formation of a 100 nm or less fine pattern, having fewer development defects and being excellent in various performances such as resolution, isolation DOF and PEB temperature dependency and a pattern formation using the same, in order to solve problems on performance improvement technology in microfabrication of a semiconductor element using an active ray or radiation. <P>SOLUTION: The positive photosensitive composition is characterized by containing a resin which has a specific acid decomposable repeating unit and a specific acid non-decomposable repeating unit and an increased dissolution rate in an alkali developer by action of acid and containing a compound generating acid by irradiation with an active ray or radiation. The pattern formation method uses it. <P>COPYRIGHT: (C)2012,JPO&INPIT |
