| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectrochemical cell capable of generating power with higher quantum efficiency. <P>SOLUTION: A photoelectrochemical cell 1 comprises a semiconductor electrode 20 including a conductor 21 and an n-type semiconductor layer 22, a counter electrode 30, an electrolytic solution 40 including an electrolyte, and a container 10. The band edge level of a conduction band in the vicinity of the surface of the n-type semiconductor layer 22 is greater than or equal to the band edge level of a conduction band in the vicinity of the bonded surface bonded to the conductor 21. The band edge level of a valence band in the vicinity of the surface of the n-type semiconductor layer 22 is greater than or equal to the band edge level of a valence band in the vicinity of the bonded surface bonded to the conductor 21. The Fermi level in the vicinity of the bonded surface of the n-type semiconductor layer 22 is greater than the Fermi level in the vicinity of the surface of the n-type semiconductor layer 22. The Fermi level of the conductor 21 is greater than the Fermi level in the vicinity of the bonded surface of the n-type semiconductor layer 22. The oxidation reduction potential of the electrolyte is greater than or equal to the band edge level of the valence band in the vicinity of the surface of the n-type semiconductor layer 22 and less than or equal to the Fermi level in the vicinity of the surface of the n-type semiconductor layer 22. <P>COPYRIGHT: (C)2012,JPO&INPIT |
