METHOD OF FABRICATING GE OR SIGE/SI WAVEGUIDE OR PHOTONIC CRYSTAL STRUCTURES BY SELECTIVE GROWTH
摘要
A method of forming a low loss crystal quality waveguide is provided. The method includes providing a substrate and forming a dielectric layer on the substrate. A channel is formed by etching a portion of the dielectric layer. A selective growth of a Si Ge, or SiGe layer is performed in the area that defines the channel. Furthermore, the method includes thermally annealing the waveguide at a defined temperature range.
申请公布号
WO2007016070(A3)
申请公布日期
2007.05.03
申请号
WO2006US28779
申请日期
2006.07.25
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;PAN, DONG;LIU, JIFENG;MICHEL, JURGEN;YASAITIS, JOHN, ALLEN;KIMERLING, LIONEL, C.
发明人
PAN, DONG;LIU, JIFENG;MICHEL, JURGEN;YASAITIS, JOHN, ALLEN;KIMERLING, LIONEL, C.