| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an abrasive pad having low elastic recovery and exhibiting significant inelasticity. <P>SOLUTION: An abrasive pad and a polishing method are used for polishing the surface of a semiconductor device or a precursor, and for planarizing a metal damascene structure on a semiconductor wafer. The polishing layer of the pad has a hardness of 40-70 Shore D, tensile elasticity of 100-2,000 MPa at 40°C, and the ratio of E' of 1-5 at 30-90°C. When the pad is immersed in deionized water for 24 hours at ambient temperature of about 25°C, each linear dimension of the pad changes about 1% or less, and hardness of the pad reduces about 30% or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
