SEMICONDCUTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

A method for manufacturing a semiconductor device according to an embodiment of the present invention comprises the steps of: forming split gate structures including a floating gate electrode layer and a control gate electrode layer in a cell region of a substrate including the cell region and a logic region adjacent to the cell region; sequentially forming a first gate insulating film and a metal gate film in the logic region and the cell region; removing the metal gate film from at least a portion of the cell region and the logic region; forming a second gate insulating film on the first gate insulating film from which the metal gate film has been removed; forming a gate electrode film on the logic region and the cell region; and forming a plurality of memory cell elements disposed in the cell region and a plurality of circuit elements disposed in the logic region by patterning the first and second gate insulating films, the gate electrode film, and a residue of the metal gate film. Therefore, a gate leakage phenomenon may be efficiently prevented or lessened and at the same time, an electrical short phenomenon that may be caused by the metal gate layer in the memory cell device and a data retention error may be prevented or lessened.