| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching rate of a silicon oxide film by suppressing depth loading.SOLUTION: An etching processing method is disclosed by which a temperature of a chiller for cooling a placement table is controlled equal to or lower than -20°C, plasma is generated from a hydrogen containing gas and a fluorine containing gas which are supplied by a gas supply source, by first high frequency power that is applied from a first high frequency power source and etching processing is performed on the silicon oxide film of a substrate on the placement table by the generated plasma. In de-electrification processing after the etching processing, second high frequency power in a frequency lower than that of the first high frequency power is applied from a second high frequency power source to the placement table.SELECTED DRAWING: Figure 2 |
