METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the reliability of a semiconductor device from decreasing.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming an electrode pad PAD whose main component is aluminum on a principal surface of a semiconductor wafer; forming a first insulation member OL1 and a second insulation member OL2 on the principal surface of the semiconductor wafer so as to cover the electrode pad PAD; forming an opening OP through which a surface of the electrode pad PAD is exposed on the first insulation member OL1 and the second insulation member OL2 by a dry etching method using an etching gas containing a halogen-based gas; forming an oxide film OF having a thickness of 2 nm to 6 nm on the surface on which the electrode pad PAD is exposed by performing heat treatment at 200°C to 300°C under an air atmosphere; and storing the semiconductor wafer.SELECTED DRAWING: Figure 2