ORGANIC SEMICONDUCTOR DOPING PROCESS

摘要

The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidised salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidised salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent. A process for producing a semiconductor device comprising a process for doping an organic semiconductor according to the invention is also described. Finally, a high purity p-dopant composition is described.

主权项

1. A process for producing a p-doped organic semiconductor comprising treating an organic semiconductor with a composition comprising an oxidised salt of the organic semiconductor, which oxidised salt of the organic semiconductor is a salt of formula [OS][A], wherein OS is a cation of an organic semiconductor and A is ClO4−, NO3− or an anion of formula (i), (ii), (iii) or (iv) wherein each X is the same or different and is an electron withdrawing group, optionally wherein X is CF3 or CF2CF3.