ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE

摘要

An electrostatic discharge (ESD) protection device includes a semiconductor layer having a first doped region, a second doped region, and an intrinsic region formed therein, and a plurality of insulating elements respectively formed therein. The plurality of insulating elements is respectively formed in a portion of the semiconductor layer between the first, second and third doped regions. The intrinsic region is formed at least in the semiconductor layer between one of the second and third regions and the other one of the second and third regions or between one of the second and third regions and the first region. The first doped region is formed with a first conductivity type, and the second and third doped regions are formed with a second conductivity type opposite to the first conductivity type.

主权项

1. An electrostatic discharge (ESD) protection device, comprising:
a semiconductor layer; a first doped region formed in a first portion of the semiconductor layer; a second doped region formed in a second portion of the semiconductor layer; a third doped region formed in a third portion of the semiconductor layer; a plurality of insulating elements respectively formed in a portion of the semiconductor layer between the first, second and third doped regions; and an intrinsic region formed at least in the semiconductor layer between one of the second and third portions of the semiconductor layer and the other one of the second and third portions of the semiconductor layer in the semiconductor layer or between one of the second and third portions of the semiconductor layer and the first portion of the semiconductor layer, wherein the first doped region is formed with a first conductivity type, and the second and third doped regions are formed with a second conductivity type opposite to the first conductivity type.