发明名称 Semiconductor Device and Method of Manufacturing the Same
摘要 To improve the reliability of a semiconductor device.;The semiconductor device includes a plurality of wiring layers formed on a semiconductor substrate, a pad formed on an uppermost wiring layer of the plurality of wiring layers, a surface protection film which includes an opening on the pad and is made of an inorganic insulating film, a rewiring formed on the surface protection film; a pad electrode formed on the rewiring, and a wire connected to the pad electrode. The rewiring includes a pad electrode mounting portion on which the pad electrode is mounted, a connection portion which is connected to the pad, and an extended wiring portion which couples the pad electrode mounting portion and the connection portion, and the pad electrode mounting portion has a rectangular shape when seen in a plan view.
申请公布号 US2016240499(A1) 申请公布日期 2016.08.18
申请号 US201615004983 申请日期 2016.01.24
申请人 Renesas Electronics Corporation 发明人 YAMADA Kentaro;TOMARU Shigeki;FUKUSHIMA Taketoshi
分类号 H01L23/00;H01L23/498 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor substrate; a plurality of wiring layers formed on the semiconductor substrate; a pad formed on an uppermost wiring layer of the plurality of wiring layers; a surface protection film which includes an opening on the pad and is made of an inorganic insulating film; a rewiring formed on the surface protection film; and a pad electrode which is formed on the rewiring, and is a region for connection with a wire, wherein the rewiring includes a pad electrode mounting portion on which the pad electrode is mounted, a connection portion which is connected to the pad, and an extended wiring portion which couples the pad electrode mounting portion and the connection portion, and the pad electrode mounting portion has a rectangular shape when seen in a plan view.
地址 Tokyo JP