| 发明名称 |
METHOD OF FORMING MOSFET STRUCTURE |
| 摘要 |
A method includes providing a semiconductor structure that includes an epitaxial layer and a cap layer above the epitaxial layer, filling a trench above the cap layer with a sacrificial layer, and removing the sacrificial layer. As such, the cap layer is protected by the sacrificial layer during an etching process and the epitaxial layer is protected by the cap layer during another etching process. |
| 申请公布号 |
US2016247896(A1) |
申请公布日期 |
2016.08.25 |
| 申请号 |
US201615146135 |
申请日期 |
2016.05.04 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
FU CHING-FENG;YEN YU-CHAN;KO CHIH-HSIN;LEE CHUN-HUNG;LIN HUAN-JUST;CHANG HUI-CHENG |
| 分类号 |
H01L29/66;H01L29/78;H01L29/165;H01L29/08;H01L29/161 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
providing a semiconductor structure that includes an epitaxial layer and a cap layer above the epitaxial layer; filling a trench above the cap layer with a sacrificial layer; and removing the sacrificial layer. |
| 地址 |
Hsinchu TW |
