发明名称 過電圧保護回路
摘要 PROBLEM TO BE SOLVED: To provide an overvoltage protection circuit capable of protecting an output transistor at a final output stage from an overvoltage applied to an output terminal of a semiconductor device.SOLUTION: An overvoltage protection circuit is provided at a final output stage having, as an output transistor, at least one of a PMOS transistor connected between power-supply wiring and an output terminal and driving the output terminal and an NMOS transistor connected between the output terminal and ground wiring and driving the output terminal, and protects the output transistor from an overvoltage applied to the output terminal. The overvoltage protection circuit includes: a first diode connected between a drain of the output transistor and the output terminal in a forward direction to a current that drives the output terminal; a resistive element connected in parallel to the first diode; and a second diode connected between a source and the drain of the output transistor in a reverse direction to the current that drives the output terminal.
申请公布号 JP6012361(B2) 申请公布日期 2016.10.25
申请号 JP20120207339 申请日期 2012.09.20
申请人 株式会社メガチップス 发明人 佐々木 真吾
分类号 H01L21/822;H01L27/04;H01L27/06 主分类号 H01L21/822
代理机构 代理人
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