发明名称 |
PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method for performing plasma processing while controlling a temperature and capable of suppressing a temporal change of plasma processing results.SOLUTION: A plasma processing device comprises a processing chamber in which a sample is subjected to plasma processing using plasma, a high-frequency power supply which supplies high-frequency power for generating plasma; and a sample stand arranged with a temperature sensor and a heater therein and mounted with the sample. The plasma processing device further includes a control device which determines whether to start plasma processing on the basis of a value of the temperature sensor and an output value of the heater.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016213359(A) |
申请公布日期 |
2016.12.15 |
申请号 |
JP20150096999 |
申请日期 |
2015.05.12 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
MATSUDA KOHEI;MORI MASASHI;NISHIDA TOSHIAKI;KAWAMOTO NAOHIRO;FURUBAYASHI HITOSHI |
分类号 |
H01L21/3065;C23C16/52;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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