发明名称 PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method for performing plasma processing while controlling a temperature and capable of suppressing a temporal change of plasma processing results.SOLUTION: A plasma processing device comprises a processing chamber in which a sample is subjected to plasma processing using plasma, a high-frequency power supply which supplies high-frequency power for generating plasma; and a sample stand arranged with a temperature sensor and a heater therein and mounted with the sample. The plasma processing device further includes a control device which determines whether to start plasma processing on the basis of a value of the temperature sensor and an output value of the heater.SELECTED DRAWING: Figure 1
申请公布号 JP2016213359(A) 申请公布日期 2016.12.15
申请号 JP20150096999 申请日期 2015.05.12
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 MATSUDA KOHEI;MORI MASASHI;NISHIDA TOSHIAKI;KAWAMOTO NAOHIRO;FURUBAYASHI HITOSHI
分类号 H01L21/3065;C23C16/52;H05H1/46 主分类号 H01L21/3065
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