| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting element in which light extraction efficiency of deep ultraviolet light is improved.SOLUTION: A light emitting element 10 comprises: an n-type clad layer 18 on a substrate 12, which is formed by an n-type AlGaN-based semiconductor material; an active layer 20 on the n-type clad layer 18, which is formed by an AlGaN-based semiconductor material; an electron block layer 22 on the active layer 20, which is formed by a p-type AlGaN-based semiconductor material or a p-type AlN-based semiconductor material; a reflection layer 26 which is formed by a material having a refraction index lower than that of the electron block layer 22 in a first region W1 on the electron block layer 22, and has an opening 30 in a second region W2 on the electron block layer 22 adjacent to the first region W1; and a contact layer 28 which is provided across both of the opening 30 and a surface of the reflection layer 26 and formed by a p-type AlGaN-based semiconductor material or a p-type GaN-based semiconductor material having an Al content rate lower than that of the active layer 20.SELECTED DRAWING: Figure 1 |
