| 摘要 |
<p>The invention relates to a semiconductor device comprising a semiconductor body (10) including , for example, a p-type substrate (11) and a PNP bipolar transistor having a collector (1), a base (2) and an emitter (3), which are each provided with a connection conductor (7, 8, 9). One or more of the connection conductors (7, 8, 9) extend over a part of an insulating layer (20) which covers the body (10) which contains, below said insulating layer (20), a further semiconductor region (4) of a conductivity type opposite to that of the substrate (11). A disadvantage of the known device is that it is less suitable for certain applications, such as power amplification. In a device according to the invention, a sub-region (4b) of the further semiconductor region which borders on the substrate (11) is provided with a higher doping concentration than the remainder (4a) of the further semiconductor region (4). In the known device, a low value of the interconnect capacitance can be achieved by providing the further region (4) with a low doping concentration. However, this may lead to complete depletion of said region (4), which implies that the equivalent loss resistance becomes zero. In the device according to the invention, on the one hand, a capacitance is connected in series to the insulating layer (20), which is sufficiently low to reduce the interconnect capacitance, while, on the other hand, an equivalent loss resistance of zero is precluded. Moreover, the transistor can be readily manufactured since the further region (4) can be manufactured simultaneously with the collector (1). Preferably, the substrate is provided with an additional connection conductor (12) on top of the body (10), close to the active region, said connection conductor being connected, for example, to the connection conductor (9) of the emitter (3).</p> |
