| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can reliably read data therefrom. SOLUTION: An OUM 100 as the semiconductor memory device comprises a semiconductor substrate 1 and a laminate 10 formed on the semiconductor substrate 1. The laminate 10 includes a memory layer 6 having a first state (amorphous state) exhibiting a first electric resistance and a second state (crystalline state) having a second electric resistance smaller than the first electric resistance, and also including a heating layer 5 having nearly the same width as the memory layer 6 for heating the memory layer 6. The OUM 100 comprises bit lines 9 electrically connected to the memory layer 6 and extended in a predetermined direction. The heating layer 5 has nearly the same width W1 as the memory layer 6 along the extension direction of the bit lines 9. COPYRIGHT: (C)2005,JPO&NCIPI
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