| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light receiving element having desired wavelength selectivity by using a thinner filter layer, and to provide a light receiving element module equipped with this light receiving element. <P>SOLUTION: The light receiving element comprises a semiconductor substrate 11 made of a group III-V compound, and a principal surface including a first area 29 for receiving the light of first and second wavelength components and a second area 31 wherein a semiconductor region 20 is formed. The light receiving element is provided with a semiconductor layer 17 for filters formed on the surface of semiconductor layer 17 for a filter, a first electrode 13 capable of reflecting light generated on the surface of the semiconductor substrate 11 made of a group III-V compound, and a semiconductor region 20 containing a light receiving layer 19 which belongs to a first electric conductor type for receiving reflective light from the first electrode 13 via the semiconductor layer 17 for the filter. The semiconductor layer 17 for the filter has the transmissivity of the first wavelength component smaller than the transmissivity of the second wavelength component. <P>COPYRIGHT: (C)2007,JPO&INPIT |
