| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming an epitaxial thin film of a metal sulfide directly on a substrate when a thin film element of a compound with ionic bond is formed on the substrate made of an Si monocrystal and is manufactured. <P>SOLUTION: A formula 21 derived for a general purpose substrate for the first time is used for the substrate, and a formula 22 can be used for the epitaxial thin film. A sign 1 shows an Si (111) monocrystal substrate, a sign 2 shows an MnS layer (about 50 nm) formed on the monocrystal substrate 1, a sign 3 shows an AlN layer (about 1,000 nm) formed on the MnS layer 2, and a sign 4 shows a GaN layer (about 100 nm) formed on the AlN layer and functioning as a light emitting layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
