Nichtflüchtiges Speicherbauelement mit Ladungseinfangstruktur und Herstellungsverfahren,申请号DE200510051492-传众专利搜索

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发明名称	Nichtflüchtiges Speicherbauelement mit Ladungseinfangstruktur und Herstellungsverfahren
摘要
申请公布号	DE102005051492(B4)	申请公布日期	2008.02.28
申请号	DE200510051492	申请日期	2005.10.19
申请人	SAMSUNG ELECTRONICS CO. LTD.	发明人	KIM, SANG-SU
分类号	H01L27/115;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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