发明名称 FILM DEPOSITION METHOD, FILM DEPOSITION APPARATUS, AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a film deposition method or the like of a copper film in which any organic impurity layer is less deposited, any abnormal growth of the copper film is less, and the adhesiveness to a base film is excellent. SOLUTION: A copper adhesive layer is deposited on a substrate by feeding a raw material gas consisting of an organic compound of copper (for example, copper hexafluoroacetylacetonate-trimethylvinylsilane [Cu(hfac)TMVS]) in a state in which steam is present in a treatment vessel with the substrate being placed therein. Then, the steam and the raw material gas in the treatment vessel is discharged, and a raw material gas is fed again in the treatment vessel to deposit a copper film on a surface of the copper adhesive layer. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008024978(A) 申请公布日期 2008.02.07
申请号 JP20060197667 申请日期 2006.07.20
申请人 TOKYO ELECTRON LTD 发明人 KOJIMA YASUHIKO;IKEDA TARO;HATANO TATSUO
分类号 C23C16/18;H01L21/28;H01L21/285;H01L21/3205;H01L23/52 主分类号 C23C16/18
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