NONVOLATILE MEMORY ELEMENT, AND OPERATING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory element and an operating method thereof.

SOLUTION: The nonvolatile memory element is provided with a string selection transistor, a plurality of memory transistors and a ground selection transistor between a bit line and a common source line, and is capable of erasing data in the plurality of memory transistors by applying an erasing voltage to the bit line or the common source line.

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