| 摘要 |
The invention relates to a power semiconductor module (10) comprising • at least one substrate (4); • at least one power semiconductor device (2) arranged on the substrate (4) and having a land (21) on its surface facing away from the substrate; • a load potential surface (23), arranged on the substrate (4) next to the power semiconductor device (2), which surface is optionally segmented; and • a plurality of bonding connections (25, 26) for the parallel electrically conductive connection of the land (21) to the load potential surface (23), each bonding connection (25, 26) having at least one first bond heel (31) on the load potential surface (23) and several second bond heels (32) on the land (21), the land (21) of each bonding connection (25, 26) having at least one end, the plurality of bonding connections (25, 26) being grouped in at least two groups (25 or 26) of several bonding connections with the same number of bond heels and the second bond heels (32) of each bonding connection of one group being arranged in a segment defined by a surface portion of the land or in a region (22a or 22b) of the land (21) only and the groups differing in that their first bond heels (31) are located on the load potential surface (23) at a different distance (a1 or a2) from the power semiconductor device (2), preferably however at a distance that is the same within each group. |
