Method for Manufacturing a Semiconductor Device Using Tilted Ion Implantation Processes, Semiconductor Device and Integrated Circuit

摘要

A semiconductor device includes first and second field effect transistors (FETs) formed in a semiconductor substrate having a first main surface. The first FET includes first source and drain contact grooves, each running in a first direction parallel to the first main surface, each formed in the first main surface. First source regions are electrically connected to a conductive material in the first source contact groove. First drain regions are electrically connected to a conductive material in the first drain contact groove. The second FET includes second source and drain contact grooves, each running in a second direction parallel to the first main surface, each formed in the first main surface. Second source regions are electrically connected to a conductive material in the second source contact groove, and second drain regions are electrically connected to a conductive material in the second drain contact groove.

主权项

1. A semiconductor device, comprising a first field effect transistor and a second field effect transistor each formed in a semiconductor substrate having a first main surface,
wherein the first field effect transistor comprises:
a first source contact groove and a first drain contact groove, each running in a first direction parallel to the first main surface, and each being formed in the first main surface;first source regions of a first conductivity type electrically connected to a conductive material in the first source contact groove; andfirst drain regions of the first conductivity type electrically connected to a conductive material in the first drain contact groove, wherein the second field effect transistor comprises:
a second source contact groove and a second drain contact groove, each running in a second direction parallel to the first main surface, the second direction being different from the first direction, and each being formed in the first main surface;second source regions of a second conductivity type electrically connected to a conductive material in the second source contact groove; andsecond drain regions electrically connected to a conductive material in the second drain contact groove.