| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor layer composed of polysilicon in a display area, and to form a semiconductor layer composed of a flat single crystal silicon film in a peripheral area, in an electrooptical device such as a liquid crystal device. SOLUTION: The electrooptical device includes: a plurality of pixel sections aligned on the display area on a substrate; and a driving circuit containing a semiconductor device having a first semiconductor layer which has an SOI (Silicon On Insulator) structure composed of a first single crystal silicon film, and a second semiconductor layer which is composed of a second single crystal silicon film formed on the first semiconductor layer through epitaxial growth. The driving circuit is arranged in the peripheral area located around a periphery of the display area to drive the plurality of pixel sections. COPYRIGHT: (C)2007,JPO&INPIT |
