发明名称 |
Method for forming silicide and method for fabricating semiconductor device |
摘要 |
A method for forming silicide includes the steps of: forming a nickel film on a silicon layer (or a silicon substrate); introducing nitrogen into at least one of the nickel film and the interface between the nickel film and the silicon layer (or the silicon substrate); and after the introduction of the nitrogen, applying heat treatment to the nickel film and the silicon layer (or the silicon substrate) under predetermined conditions to form a nickel disilicide layer.
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申请公布号 |
US2007202692(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20070708614 |
申请日期 |
2007.02.21 |
申请人 |
RENESAS TECHNOLOGY CORPORATION |
发明人 |
WATANABE YUKIMUNE;MISE NOBUYUKI;MIGITA SHINJI |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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