| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a gas sensor capable of reducing the effect of a combustible gas such as hydrogen or the like and the effect of an oxidizable gas such as NOx or the like and capable of more enhancing the sensing precision and sensing sensitivity of an offensive gas than before. <P>SOLUTION: The gas sensor 1 has a rectangular planar shape and an insulating film layer 3 is formed on the upper surface of a silicon substrate 2 and enclosed with a heating resistor 5 while an adhesion layer 7 and a gas sensing layer 4 are formed on the upper surface of the insulating film layer 3. The gas sensing layer 4 has SnO<SB>2</SB>as a metal oxide semiconductor as a principal constitutent and further contains at least V<SB>2</SB>O<SB>5</SB>and Ir. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
