| 摘要 |
Provided is a method for filming such a multilayer film structure over a substrate as is made of a stable, excellently crystalline III-group nitride semiconductor. The multilayer film structure includes at least a buffer layer and a substrate layer from a substrate side, and the buffer layer and the substrate layer are filmed by the sputtering method. The filming temperature of the buffer layer is lower than that of the substrate layer, or the film thickness of the buffer layer is 5 nm to 500 nm. Moreover, the multilayer film structure includes at least the substrate layer and a light emitting layer from the substrate side. The method comprises the step of filming the substrate layer by the sputtering method and the light emitting layer by the metal organic chemical vapor deposition method (or the MOCVD method). |
